Preparation of high performance Ga2O3 based ultraviolet photodetector by CVD

Author:

Wang Xiao,Cheng Qiao,Rong Ximing,Han Shun,Zeng Yuxiang,Cao Peijiang,Fang Ming,Liu WenjunORCID,Zhu Deliang,Lu Youming

Funder

Shenzhen University

Shenzhen Fundamental Research Program

Science and Technology Foundation of Shenzhen City

Natural Science Foundation of Guangdong Province

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Physical and Theoretical Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference44 articles.

1. Review of polymorphous Ga2O3 materials and their solar-blind photodetector applications;Hou;J. Phys. Appl. Phys.,2020

2. Solar-blind photodetector based on single crystal Ga2O3 film prepared by a unique ion-cutting process;Ren;ACS Appl. Electron. Mater.,2020

3. β-Ga2O3 nanowires: controlled growth, characterization, and deep-ultraviolet photodetection application;Ruan;J. Phys. Appl. Phys.,2022

4. Temperature-dependent crystallization of Ga2O3 for ultraviolet photodetectors;Wu;J. Electron. Mater.,2020

5. Recent progress on the electronic structure, defect, and doping properties of Ga2O3;Zhang;Apl. Mater.,2020

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