Crystal structure and physical properties of the quaternary phase CuGaxIn5–xS8, 1.4 ≤ x ≤ 2.05, in the Cu2S − Ga2S3

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Crystal structure and physical properties of the quaternary phase CuGaxIn5–xS8, 1.4 ≤ x ≤ 2.05, in the Cu2S − Ga2S3 – In2S3 system

Published:2022-06 Issue: Volume:310 Page:123034
ISSN:0022-4596
Container-title:Journal of Solid State Chemistry
language:en
Short-container-title:Journal of Solid State Chemistry

Author:

Ivashchenko I.A.,Olekseyuk I.D.,Gulay L.D.,Halyan V.V.,Kevshyn A.H.,Tishchenko P.V.,Strok O.M.

Funder

Ministry of Education and Science of Ukraine

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Physical and Theoretical Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. A. Lafond, C. Guillot-Deudon, M. Paris, M. Caldes, S. Jobic Crystal chemistry investigations on photovoltaic chalcogenides. Crystallography Mater. Sci., hal-03039192; https://hal.archives-ouvertes.fr/hal-03039192.

2. Layered Quaternary Compounds in the Cu2S–In2S3–Ga2S3 system

3. Verbindungen mit Schichtstrukturen in den Systemen CuGa5S8/CuIn5S8 und AgGa5S8/AgIn5S8

4. H. Haeuseler, S. K. Srivastava Z. Kristallogr. 215 (2000), 205; DOI: 10.1524/zkri.2000.215.4.205.

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