Funder
National Research Foundation of Korea
Korea government
Subject
General Physics and Astronomy,General Materials Science
Reference10 articles.
1. Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60 mV/dec;Choi;IEEE Electron Dev. Lett.,2007
2. The tunneling field effect transistor (TFET) used in a single-event-upset (SEU) insensitive 6 transistor SRAM cell in ultra-low voltage applications;Nirsch,2004
3. Planar GeOI TFET performance improvement with back biasing;Matheu;IEEE Trans. Electron Dev.,2012
4. Germanium-source tunnel field effect transistors with record high ION/IOFF;Kim,2009
5. Tunnel field effect transistor with raised germanium source;Kim;IEEE Electron Dev. Lett.,2010
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