Electron penetration depth in amorphous AlN exploiting the luminescence of AlN:Tm/AlN:Ho bilayers
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference22 articles.
1. Direct ultraviolet excitation of an amorphous AlN:praseodymium phosphor by codoped Gd3+ cathodoluminescence
2. Structure changes of AlN:Ho films with annealing and enhancement of the Ho3+ emission
3. Spectroscopic properties of Sm3+(4f 5) in GaN
4. Luminescence from praseodymium doped AlN thin films deposited by RF magnetron sputtering and the effect of material structure and thermal annealing on the luminescence
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3. Response of structural and optical properties against proton irradiation in AlN:Tm thin films;Radiation Physics and Chemistry;2021-03
4. Properties of Zr2ON2 film deposited on Mg-Gd-Zn alloy with Mg-Al hydrotalcite film by arc ion plating;Surface and Coatings Technology;2016-05
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