Characterisation of polycrystalline gallium nitride grown by plasma-assisted evaporation
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
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1. High-Precision Motion Estimate of Soft Tissue in the Physiologaical State Using Two-Dimensional Complex-Valued Wavelet Transform of Speckle Echo
2. X-ray and Raman analyses of GaN produced by ultrahigh-rate magnetron sputter epitaxy
3. Gas Source Molecular Beam Epitaxy Growth of GaN on C-, A-, R- and M-Plane Sapphire and Silica Glass Substrates
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1. Hydrothermal–electrochemical deposition of semiconductor thin films: the case of CuIn(Al)Se2 compound;Journal of Materials Science: Materials in Electronics;2017-07-08
2. RETRACTED ARTICLE: A Review on Nanoporous Gallium Nitride (NPGaN) Formation on P-Type Silicon Substrate with the Mather-type Plasma Focus Device (MPFD);Journal of Inorganic and Organometallic Polymers and Materials;2017-04-18
3. A novel technique based on a plasma focus device for nano-porous gallium nitride formation on P-type silicon;Physics of Plasmas;2017-04
4. A catalyst free method to grow GaN nanowires on porous Si at low temperature;Ceramics International;2015-12
5. Stress and Grain Boundary Properties of GaN Films Prepared by Pulsed Laser Deposition Technique;ISRN Materials Science;2014-03-17
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