Highly-doped p-type few-layer graphene on UID off-axis homoepitaxial 4H

Highly-doped p-type few-layer graphene on UID off-axis homoepitaxial 4H–SiC

Published:2021-07 Issue: Volume:27 Page:17-24
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Ciuk Tymoteusz^ORCID,Kaszub Wawrzyniec,Kosciewicz Kinga,Dobrowolski Artur,Jagiello Jakub,Chamryga Adrianna,Gaca Jaroslaw,Wojcik Marek,Czolak Dariusz,Stanczyk Beata^ORCID,Przyborowska Krystyna,Kozlowski Roman,Kozubal Michal,Michalowski Pawel Piotr^ORCID,Szary Maciej Jan^ORCID,Kaminski Pawel^ORCID

Funder

Narodowe Centrum Nauki

Narodowe Centrum Badań i Rozwoju

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference52 articles.

1. Graphene epitaxy by chemical vapor deposition on SiC;Strupinski;Nano Lett.,2011

2. Thermally activated double-carrier transport in epitaxial graphene on vanadium-compensated 6H-SiC as revealed by Hall effect measurements;Ciuk;Carbon N. Y.,2018

3. High-temperature Hall effect sensor based on epitaxial graphene on high-purity;Ciuk;IEEE Trans. Electron. Dev.,2019

4. Graphene FET gigabit ON-OFF keying demodulator at 96 GHz;Habibpour;IEEE Electron. Device Lett.,2016

5. A W-band MMIC resistive mixer based on epitaxial graphene FET;Habibpour;IEEE Microw. Wireless Compon. Lett.,2017

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Unlocking the chemistry of graphene: The impact of charge carrier concentration on molecular adsorption on graphene;Applied Surface Science;2025-01

2. Carrier doping modulates the magnetoelectronic and magnetic anisotropic properties of two-dimensional MSi₂N₄ (M = Cr, Mn, Fe, and Co) monolayers;Physical Chemistry Chemical Physics;2024

3. Spectroscopic properties of close-to-perfect-monolayer quasi-free-standing epitaxial graphene on 6H SiC(0001);Applied Surface Science;2024-01

4. Electrical and Structural Characterization of Few-Layer Graphene Sheets on Quartz;Materials;2022-08-03

5. Contamination-induced inhomogeneity of noise sources distribution in Al2O3-passivated quasi-free-standing graphene on 4H-SiC(0001);Physica E: Low-dimensional Systems and Nanostructures;2022-08