Author:
Yoon Jaehong,Kim Soo Hyeon,Kim Hangil,Kim Soo-Hyun,Kim Hyungjun,Lee Han-Bo-Ram
Funder
Basic Science Research Program
National Research Foundation of Korea (NRF)
Ministry of Education
MOTIE (Ministry of Trade, Industry & Energy)
KSRC (Korea Semiconductor Research Consortium)
Subject
General Physics and Astronomy,General Materials Science
Reference32 articles.
1. Towards implementation of a nickel silicide process for CMOS technologies;Lavoie;Microelectron. Eng.,2003
2. Self-aligned silicides for Ohmic contacts in complementary metal–oxide–semiconductor technology: TiSi2, CoSi2, and NiSi;Zhang;J. Vac. Sci. Technol. A,2004
3. Metal silicides in CMOS technology: past, present, and future trends;Zhang;Crit. Rev. Solid State Mater. Sci.,2003
4. Comparison of TiSi2, CoSi2, and NiSi for thin-film silicon-on-insulator applications;Chen;J. Electrochem. Soc.,1997
5. Self-aligned cobalt disilicide for gate and interconnection and contacts to shallow junctions;Murarka;IEEE Trans. Electron Devices,1987
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献