Surface morphological evolution of crystalline Si during chemical dry etching using F radicals and NO gas-Reference-Cited by-同舟云学术

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Surface morphological evolution of crystalline Si during chemical dry etching using F radicals and NO gas

Published:2011-09 Issue:5 Volume:11 Page:S73-S78
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Ahn J.H.,Heo W.,Jung C.R.,Lee N.-E.

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference24 articles.

1. Isotropic etching of silicon in fluorine gas for MEMS micromachining

2. Silicon dioxide sacrificial layer etching in surface micromachining

3. IEEE The Sixteenth Annual International Conference on Micro Electro Mechanical Systems. (MEMS 2003);Frédérico,2003

4. Investigation and simulation of XeF[sub 2] isotropic etching of silicon

5. Isotropic etch for SiO2 microcantilever release with ICP system

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of pulsed bias on TiO2 thin films prepared on silicon by arc ion plating and simulation of pulsed plasma sheath dynamics;Thin Solid Films;2012-10

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