Effect of temperature and injection current on characteristics of TO-CAN packaged Fabry–Perot laser diode

Author:

Han Jae-Ho,Park Sung-Woong

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference13 articles.

1. Degradation of active region in InGaAsP/InP buried heterostructure laser;Fukuda;J. Appl. Phys.,1985

2. Reliability and degradation behavior of highly coherent 1.55-μm long-cavity multiple quantum well (MQW) DFB lasers;Fukuda;J. Lightwave Technol.,1992

3. Generic reliability assurance requirements for optoelectronic devices used in telecommunications equipment, Bellcore, GR-468-CORE, 1998.

4. The temperature dependence of the threshold current of GaInAsP/InP DH lasers;Asada;IEEE J. Quantum Electron.,1981

5. Threshold temperature characteristics of double heterostructure GaxAl1−xAs lasers;Goodwin;J. Appl. Phys.,1975

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