Analytical model of the drain current in amorphous silicon junction field effect transistors-Reference-Cited by-同舟云学术

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Analytical model of the drain current in amorphous silicon junction field effect transistors

Published:2022-09 Issue: Volume:41 Page:26-31
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Caputo Domenico^ORCID,Lovecchio Nicola^ORCID,Di Laurenzio Sara^ORCID,de Cesare Giampiero

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference27 articles.

1. Substitutional doping of amorphous silicon;Spear;Solid State Commun.,1975

2. Hydrogenated Amorphous Silicon;Street,2005

3. Amorphous silicon solar cells;Shah,2020

4. Photovoltaic Science and Engineering;Luque,2003

5. Amorphous silicon detector and thin film transistor technology for large-area imaging of x-rays;Nathan;Microelectron. J.,2000

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication of Junction Field-Effect Transistors on a Flexible Substrate by Using Hydrogenated Amorphous Silicon;2023 9th International Workshop on Advances in Sensors and Interfaces (IWASI);2023-06-08

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