The surface passivation of Cd1−xZnxTe as to ZnS thickness and pre-heating

Author:

Kim Young-Hun,Kim Sung-Hoon,Kim In-Jae,An Se Young,Kim Ki Hyun

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference14 articles.

1. Defective states induced in CdTe and CdZnTe detectors by high and low energy neutron irradiation

2. CdZnTe detector in diagnostic x-ray spectroscopy

3. Modeling of the induced charge in semiconductor gamma-ray imaging array

4. Y. Nemirovsky, Properties of narrow gap cadmium-based compounds, in: P. Capper (Ed.), GEC-Marconi Infra-Red Limited, UK, 1994, p. 573

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Surface leakage current control with heterojunction-type passivation in semi-insulating CdZnTe material;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2008-06

2. Electrical properties of semi-insulating CdTe0:9Se0:1:Cl crystal and its surface preparation;Journal of Crystal Growth;2008-01

3. Electrical properties and electrical field in depletion layer for CZT crystals;Transactions of Nonferrous Metals Society of China;2006-06

4. Surface states and passivation of p-Cd0.9Zn0.1Te crystal;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2006-06

5. Surface passivation and electrical properties ofp-CdZnTe crystal;Semiconductor Science and Technology;2005-12-02

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