Physical model of a local threshold voltage shift in InGaZnO thin-film transistors under current stress for instability-aware circuit design-Reference-Cited by-同舟云学术

Physical model of a local threshold voltage shift in InGaZnO thin-film transistors under current stress for instability-aware circuit design

Published:2023-02 Issue: Volume:46 Page:55-60
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Yang Tae Jun,Kim Je-Hyuck,Cho Jung Rae,Lee Hee Jun,Kim Kyungmin,Park Jaewon,Choi Sung-Jin,Bae Jong-Ho,Kim Dong Myong^ORCID,Kim Changwook^ORCID,Park Dong-Wook^ORCID,Kim Dae Hwan

Funder

University of Seoul

NRF

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

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Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of RF power in the sputter deposition of amorphous InGaZnO film on the transient drain current of amorphous InGaZnO thin-film transistors;Solid-State Electronics;2024-06

2. Fluorination-mitigated high-current degradation of amorphous InGaZnO thin-film transistors;Journal of Semiconductors;2023-09-01

3. Investigating an abnormal hump phenomenon in top gate a-InGaZnO thin-film transistors due to mobile sodium diffusion;Scientific Reports;2023-08-22

4. Influence of Rf Power in the Sputter Deposition of Amorphous Ingazno Film on the Transient Drain Current of Amorphous Ingazno Thin-Film Transistors;2023