Wide-Bandgap III–V nitride based avalanche transit-time diode in Terahertz regime: Studies on the effects of punch through on high frequency characteristics and series resistance of the device-Reference-Cited by-同舟云学术

Wide-Bandgap III–V nitride based avalanche transit-time diode in Terahertz regime: Studies on the effects of punch through on high frequency characteristics and series resistance of the device

Published:2010-03 Issue:2 Volume:10 Page:646-651
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Mukherjee Moumita,Roy Sitesh Kumar

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference20 articles.

1. Terahertz technology

2. Wide gap semiconductor microwave devices

3. Growth of GaN on porous SiC and GaN substrates

4. GaN IMPATT diode: a photo-sensitive high power terahertz source

5. Photosensitivity Analysis of Gallium Nitride and Silicon Carbide Terahertz IMPATT Oscillators: Comparison of Theoretical Reliability and Study on Experimental Feasibility

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