Nanosilicon for single-electron devices
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference21 articles.
1. H. Grabert, M.H. Devoret (Eds.), Single Charge Tunneling––Coulomb Blockade Phenomena in Nanostructures, NATO ASI Series B, Plenum, New York, 1991
2. Size dependence of the characteristics of Si single-electron transistors on SIMOX substrates
3. Mechanism of Potential Profile Formation in Silicon Single-Electron Transistors Fabricated Using Pattern-Dependent Oxidation
4. Gate controlled Coulomb blockade effects in the conduction of a silicon quantum wire
5. Modelling of Structural and Threshold Voltage Characteristics of Randomly Doped Silicon Nanowires in the Coulomb-Blockade Regime
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3. Fault Models and Device Yield of a Large Population of Room Temperature Operation Single-Electron Transistors;20th International Conference on VLSI Design held jointly with 6th International Conference on Embedded Systems (VLSID'07);2007-01
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