Design of AlInN on silicon heterojunctions grown by sputtering for solar devices
Author:
Funder
Comunidad de Madrid
FEDER
Ramon y Cajal Fellowship
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference39 articles.
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3. InGaN solar cells: present state of the art and important challenges;Bhuiyan;IEEE Journal of Photovoltaics,2012
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5. Unusual properties of the fundamental band gap of InN;Wu;Appl. Phys. Lett.,2002
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