Photoluminescence linewidth broadening due to alloy/thickness fluctuation of CdxZn1−xSe/ZnSe triple quantum wells
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference10 articles.
1. Linewidth analysis of the photoluminescence ofInxGa1−xAs/GaAs quantum wells (x=0.09, 0.18, 1.0)
2. Dynamical properties of excitons in Zn1−xCdxSe/ZnSe quantum wells and Zn1−xCdxSe epilayers grown by molecular beam epitaxy
3. Recombination dynamics of localized excitons inIn0.20Ga0.80N-In0.05Ga0.95N multiple quantum wells
4. Theory of photoluminescence line shape due to interfacial quality in quantum well structures
5. Compositional Disorder-Induced Broadening for Free Excitons in II-VI Semiconducting Mixed Crystals
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. The complete set of eigenstates in one type of N-multiple quantum wells;Physica Scripta;2024-02-06
2. Effect of Zinc additive on dielectric properties of Cd–Se glassy system;Progress in Natural Science: Materials International;2015-06
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