Surface modification of CIGS film by annealing and its effect on the band structure and photovoltaic properties of CIGS solar cells-Reference-Cited by-同舟云学术

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Surface modification of CIGS film by annealing and its effect on the band structure and photovoltaic properties of CIGS solar cells

Published:2015-01 Issue:1 Volume:15 Page:18-24
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Shin Young Min,Lee Chang Soo,Shin Dong Hyeop,Kwon Hyuck Sang,Park Byong Guk,Ahn Byung Tae

Funder

Center for Inorganic Photovoltaic Materials

Korean Ministry of Education, Science, and Technology

Korea Institute of Energy Research

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference18 articles.

1. Compositional investigation of potassium doped Cu(In,Ga)Se2solar cells with efficiencies up to 20.8%

2. Oxygenation and air-annealing effects on the electronic properties of Cu(In,Ga)Se2 films and devices

3. Annealing studies on CuIn(Ga)Se 2 : the influence of gallium

4. Interface redox engineering of Cu(In,Ga)Se 2 – based solar cells: oxygen, sodium, and chemical bath effects

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1. Investigation of Varying Se Vapor Pressure During Deposition of CdSeTe Thin Film PV Devices;2023 IEEE 50th Photovoltaic Specialists Conference (PVSC);2023-06-11

2. Effect of Different Annealing Techniques on CIGS Deposited Using One-Step Single-Target Sputtering;Journal of Electronic Materials;2023-03-08

3. Hierarchically structured sub-bands in chalcopyrite thin-film solar cell devices;New Journal of Chemistry;2023

4. Modification of surface and interface of copper indium gallium selenide thin films with sulfurization;Emerging Materials Research;2022-09-01

5. Surface Modification of Cu(in,Ga)Se ₂ Film with a Post‐Deposition Treatment Using a KI Solution and Its Effect on Solar Cell Performance;Solar RRL;2022-05-12

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