Improvement of the electrical properties of TiO2-doped Bi5Nb3O15 thin films by the addition of MnO2-Reference-Cited by-同舟云学术

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Improvement of the electrical properties of TiO2-doped Bi5Nb3O15 thin films by the addition of MnO2

Published:2013-01 Issue:1 Volume:13 Page:148-151
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Sun Jong-Woo,Kweon Sang-Hyo,Seong Tae-Geun,Kim Jin-Seong,Jeong Byoung-Jik,Nahm Sahn

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference19 articles.

1. International Technology Roadmap for Semiconductors,2009

2. Room temperature fabricated ZnO thin film transistor using high-K Bi1.5Zn1.0Nb1.5O7 gate insulator prepared by sputtering

3. Bismuth-zinc-niobate embedded capacitors grown at room temperature for printed circuit board applications

4. Investigation on the Electric Properties of $ \hbox{Bi}_{1.5}\hbox{ZnNb}_{1.5}\hbox{O}_{7}$ Thin Films Grown on TiN Substrate for MIM Capacitors

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