A comparative study of the mechanical properties of multilayer MoS 2 and graphene/MoS 2 heterostructure: effects of temperature, number of layers and stacking order
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference34 articles.
1. Atomically thin MoS2: a new direct-gap semiconductor;Mak;Phys. Rev. Lett.,2010
2. Detailed photocurrent spectroscopy of the semiconducting group VIB transition metal dichalcogenides;Kam;J. Phys. Chem.,1982
3. Evolution of interlayer coupling in twisted molybdenum disulfide bilayers;Liu;Nat. Commun.,2014
4. Strain-dependent electronic and magnetic properties of MoS2 monolayer, bilayer, nanoribbons and nanotubes;Lu;Phys. Chem. Chem. Phys.,2012
5. Semiconductor-metal transition in semiconducting bilayer sheets of transition-metal dichalcogenides;Bhattacharyya;Phys. Rev. B,2012
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