Analysis of electrical characteristics of Er/p-InP Schottky diode at high temperature range
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference41 articles.
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2. Physics of Semiconductor Devices;Sze,1981
3. Antimony and bismuth passivations of InP and characterizations of InP metal-insulator-semiconductor structures fabricated by plasma oxidation of Sb- and Bi-passivated InP
4. Electron trapping in thin oxide on n-InP
5. Illumination dependence of I–V and C–V characterization of Au/InSb/InP(100) Schottky structure
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