Fabricating high performance n-channel lateral double diffused metal–oxide–semiconductor transistors utilizing the shallow trench isolation as a salicide blocking mask of the drift region

Author:

Na Kee-Yeol,Kim Yeong-Seuk

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference7 articles.

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4. A p+/p-buffer/n-epi cmos compatible high-side RESURF LDMOS transistor for Power IC applications

5. T. Letavic, R. Cook, R. Brock, H. Effing, R. Einerhand, in: Proceedings of the International Symposium Power Semiconductor Devices and IC’s, 2005, p. 159.

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