Characteristics of various instability in Ni-FALC poly-Si thin film transistors
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference15 articles.
1. Compact Analytical Physical-Based Model of LTPS TFT for Active Matrix Displays Addressing Circuits Simulation and Design
2. Degradation of hexagonal silicon-carbide-based bipolar devices
3. Anomalous turn-on voltage degradation during hot-carrier stress in polycrystalline silicon thin-film transistors
4. Explanation for the leakage current in polycrystalline-silicon thin-film transistors made by Ni-silicide mediated crystallization
5. Excimer laser annealing of amorphous and solid-phase-crystallized silicon films
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1. Improvement of crystallinity for poly-Si thin film by negative substrate bias at low temperature;Thin Solid Films;2017-05
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