Electrical properties of HfO2 charge trap flash memory with SiO2/HfO2/Al2O3 engineered tunnel layer
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference12 articles.
1. Charging effect of In2O3 nano-particles embedded in polyimide layer for application as non-volatile nano-floating gate memory
2. Mono-Energetic Neutron Source by 7Li(p,n)7Be Reaction
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2. Tunneling oxide engineering for improving retention in nonvolatile charge-trapping memory with TaN/Al2O3/HfO2/SiO2/Al2O3/SiO2/Si structure;Japanese Journal of Applied Physics;2020-06-01
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