A new method of generating Ga slope in Cu(In,Ga)Se2 film by controlling Se content in a multi-stacked precursor-Reference-Cited by-同舟云学术

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A new method of generating Ga slope in Cu(In,Ga)Se2 film by controlling Se content in a multi-stacked precursor

Published:2021-01 Issue: Volume:21 Page:147-154
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Mun Seon Hong,Jang Yuseong,Chalapathy R.B.V.,Ahn Byung Tae,Ahn Jin Hyung,Park Jeong Woo,Kim Kihwan,Yun Jae Ho

Funder

National Research Foundation, South Korea

Korea Institute of Energy Technology Evaluation and Planning, South Korea

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference22 articles.

1. Interface control to enhance the fill factor over 0.70 in a large-area CIS-based thin-film PV technology;Kushiya;Thin Solid Films,2008

2. Key near-term R&D issues for continuous improvement in CIS-based thin-film PV modules;Kushiya;Sol. Energy Mater. Sol. Cells,2009

3. Precursor modification for preparation of CIS films by selenization technique;Gupta;Sol. Energy Mater. Sol. Cells,1998

4. Characteristics of Cu(in,Ga)Se2 films prepared by atmospheric pressure selenization of Cu-in-Ga precursors using ditert-butylselenide as Se source;Hsiao;J. Electrochem. Soc.,2012

5. Prepan and characterization of Cu(In,Ga)(Se,S)2 films without selenization by co-sputtering from Cu(In,Ga)Se2 quaternary and In2S3 targets;Lina;Appl. Surf. Sci.,2011

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