Dark current suppression of amorphous selenium based photosensors by the ZnO hole blocking layer-Reference-Cited by-同舟云学术

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Dark current suppression of amorphous selenium based photosensors by the ZnO hole blocking layer

Published:2014-05 Issue:5 Volume:14 Page:659-664
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Yu Tung-Yuan,Pan Fu-Ming,Chang Cheng-Yi,Hu Tien,Chen Jenn-Fang,Wang Jia-Feng,Lin Cheng-Lu,Chen Tsung-Han,Chen Te-Ming

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference48 articles.

1. Fundamentals of zinc oxide as a semiconductor

2. A comprehensive review of ZnO materials and devices

3. Zinc self-diffusion, electrical properties, and defect structure of undoped, single crystal zinc oxide

4. Inverted organic photovoltaic devices with high efficiency and stability based on metal oxide charge extraction layers

5. Hybrid polymer–metal oxide thin films for photovoltaic applications

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Performance Evaluation of an Amorphous Selenium Photodetector at High Fields for Application Integration;IEEE Sensors Journal;2023-06-15

2. Gas sensing behavior of ZnO toward H2 at temperatures below 300°C and its dependence on humidity and Pt-decoration;Applied Surface Science;2021-03

3. Recent Developments of Amorphous Selenium-Based X-Ray Detectors: A Review;IEEE Sensors Journal;2020-02-15

4. Photoconductive properties of polycrystalline selenium based lateral MISIM photodetectors of high quantum efficiency using different dielectrics as the charge blocking layer;Journal of Materials Science: Materials in Electronics;2019-06-10

5. Amorphous Selenium and Nanostructures;Springer Handbook of Glass;2019

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