Electrical mechanisms of bi-stable memory devices based on an Al/PVK:ZnO NPs/ITO structure with different ZnO NPs annealing temperatures-Reference-Cited by-同舟云学术

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Electrical mechanisms of bi-stable memory devices based on an Al/PVK:ZnO NPs/ITO structure with different ZnO NPs annealing temperatures

Published:2016-10 Issue:10 Volume:16 Page:1418-1423
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Onlaor Korakot,Chaithanatkun Natpasit,Tunhoo Benchapol

Funder

King Mongkut’s Institute of Technology Ladkrabang

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference53 articles.

1. Nanostructures of zinc oxide;Wang;Mater. Today,2004

2. Recent progress in processing and properties of ZnO;Pearton;Prog. Mater. Sci.,2005

3. Dye decorated ZnO-NWs/CdS-NPs heterostructures for efficiency improvement of quantum dots sensitized solar cell;Nayeri;Superlattices Microstruct.,2016

4. High efficiency perovskite solar cells using a PCBM/ZnO double electron transport layer and a short air-aging step;Qiu;Org. Electron.,2015

5. Near room-temperature triethylamine sensor constructed with CuO/ZnO P-N heterostructural nanorods directly on flat electrode;Xu;Sensors Actuators B,2016

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1. ZnO-based hybrid nanocomposite for high-performance resistive switching devices: Way to smart electronic synapses;Materials Today;2023-10

2. Titanium Dioxide (TiO2) Sensitized Zinc Oxide (ZnO)/Conducting Polymer Nanocomposites for Improving Performance of Hybrid Flexible Solar Cells;Journal of Electronic Materials;2022-07-20

3. Effect of Growth Temperature on Morphological, Structural, and Optical Properties of ZnO Nanorods Using Modified Chemical Bath Deposition Method;Journal of Electronic Materials;2021-01-11

4. Multi-level resistive write-once-read-many memory device based on CdSe/ZnS quantum dots and ZnO nanoparticles;Thin Solid Films;2020-09

5. Carrier mechanism of ZnO nanoparticles-embedded PMMA nanocomposite organic bistable memory device;Solid State Sciences;2020-01

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