In-situ monitoring and control of hydrogenated amorphous silicon–germanium band-gap profiling during plasma deposition process
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference14 articles.
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1. Morphological Design of the Photonic Crystals Influence on Improving the Optoelectronic Properties of a-SiGe:H Thin Film Solar Cell;Jordan Journal of Physics;2023-03-31
2. An expedient semi-empirical modelling approach for optimal bandgap profiling of stoichiometric absorbers: A case study of thin film amorphous silicon germanium for use in multijunction photovoltaic devices;Solar Energy Materials and Solar Cells;2021-06
3. Performance control for amorphous silicon germanium alloys by in situ optical emission spectroscopy;Thin Solid Films;2018-08
4. Reduction in Photocurrent Loss and Improvement in Performance of Single Junction Solar Cell Due to Multistep Grading of Hydrogenated Amorphous Silicon Germanium Active Layer;Silicon;2017-04-12
5. Silicon germanium active layer with graded band gap and µc-Si:H buffer layer for high efficiency thin film solar cells;Materials Science in Semiconductor Processing;2016-12
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