The role of surface treatment on the anodic oxidation of n-GaAs-Reference-Cited by-同舟云学术

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The role of surface treatment on the anodic oxidation of n-GaAs

Published:1984-01 Issue:4 Volume:24 Page:629-631
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Kochhar Madhu,Daga O.P.,Singh B.R.,Khokle W.S.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. A Correlation Between Etch Characteristics of GaAs Etch Solutions Containing H 2 O 2 and Surface Film Characteristics

2. Preliminary Results on the Oxidation of GaAs and GaP during Chemical Etching

3. 4th Annual Conference on the Physics of Compound Semiconductor Interfaces;Chang,1977

4. Use of Auger Electron Spectroscopy in Determining the Effect of Carbon and Other Surface Contaminants on GaAs–Cs–O Photocathodes

5. Studies on Chemically Etched Silicon, Gallium Arsenide, and Gallium Phosphide Surfaces by Auger Electron Spectroscopy

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