Preparation of epitaxial layers of silicon II. Effect of impurities-Reference-Cited by-同舟云学术

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Preparation of epitaxial layers of silicon II. Effect of impurities

Published:1964-11 Issue:3 Volume:3 Page:171-173
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Nielsen S.,Rich G.J.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. S. Nielsen and G. J. Rich, Microelectronics and Reliability, 3,

2. Condensation and Evaporation;Hirth,1963

3. Art and Science of Crystal Growing,1963

4. S. Nielsen, G. J. Rich and Mrs. K. M. Fairhurst, Microelectronics and Reliability (to be published).

5. Structure Defects in Pyrolytic Silicon Epitaxial Films

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. References;Thin Films by Chemical Vapour Deposition;1990

2. Activation analysis of impurity distributions in critical layers of semiconductors;Journal of Radioanalytical Chemistry;1974-03

3. Mechanisms in Vapour Epitaxy of Semiconductors;Crystal Growth;1974

4. The preparation and properties of elemental semiconductor thin films;Thin Solid Films;1973-10

5. Germanium and Silicon;Semiconductors;1972

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