Author:
Scorzoni A.,De Munari I.,Balboni R.,Tamarri F.,Garulli A.,Fantini F.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference5 articles.
1. Electromigration In Al(Cu) Two-Level Structures: Effect of Cu and Kinetics of Damage Formation;Hu;J. Appl. Phys,1993
2. The Influence of Thermal-Mechanical Effects on Resistance Changes During and After Electromigration Experiments;Scorzoni,1995
3. Interpretation of Resistance Changes During Interconnect Reliability Testing;Sanchez,1994
4. Microstructural Mechanism of Electromigration Failure in Narrow Interconnects;Kim,1993
5. Electromigration Damage and Failure Distributions in Al-4wt.%Cu Interconnects;Shih,1995
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