Adsorption of H on Si(111)-√3 × √3-Ag: evidence for Ag(111) agglomerates formation-Reference-Cited by-同舟云学术

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Adsorption of H on Si(111)-√3 × √3-Ag: evidence for Ag(111) agglomerates formation

Published:1991-08 Issue:1-3 Volume:254 Page:L460-L464
ISSN:0167-2584
Container-title:Surface Science Letters
language:en
Short-container-title:Surface Science Letters

Author:

Oura Kenjiro,Sumitomo Koji,Kobayashi Tadashi,Kinoshita Toshihiro,Tanaka Yasunori,Shoji Fumiya,Katayama Itsuo

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces and Interfaces,Surfaces, Coatings and Films,Condensed Matter Physics

Reference42 articles.

1. Physics and electronics of the noble-metal/elemental-semiconductor interface formation: A status report

2. Untersuchungen zum schichtwachstum von silber auf der silizium(111)-oberfläche durch beugung langsamer elektronen

3. Initial growth process and surface structure of Ag on Si(111) studied by low-energy Ion-Scattering Spectroscopy (ISS) and LEED-AES

4. Atomic Arrangement of the Si(111)-$\sqrt{3}{\times}\sqrt{3}$-Ag Structure Derived from Low-Energy Ion-Scattering Spectroscopy

5. A structure analysis of Ag-adsorbed Si(111) surface by LEED/CMTA

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