Arseniure de gallium de haute mobilite obtenu par epitaxie en phase liquide
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference12 articles.
1. Proceedings of the Ga As Conference;Rupprecht,1966
2. Properties of luminescent GaAs p-n junctions with alloyed p-region
3. Growth of semiconducting compounds from non-stoichiometric melts
4. Preparation of III.V Compounds;Willardson,1962
Cited by 26 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Native Defects in III–V Ternary Alloy Semiconductors Grown from Liquid-Solutions;Japanese Journal of Applied Physics;1990-08-20
2. THERMODYNAMIC MODEL OF NATIVE DEFECTS IN III–V TERNARY ALLOYS GROWN BY LIQUID–PHASE EPITAXY;Defect Control in Semiconductors;1990
3. REFERENCES;Growth of Crystalline Semiconductor Materials on Crystal Surfaces;1984
4. Growth and properties of high purity LPE-GaAs;Journal of Crystal Growth;1982-02
5. Impurity Effect on the Formation of Terraces in GaAs LPE Growth;Physica Status Solidi (a);1979-07-16
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