Control of electron concentration in liquid-phase epitaxial layers of Pb1−xSnxTe by indium doping-Reference-Cited by-同舟云学术

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Control of electron concentration in liquid-phase epitaxial layers of Pb1−xSnxTe by indium doping

Published:1980-09 Issue:9 Volume:15 Page:1333-1338
ISSN:0025-5408
Container-title:Materials Research Bulletin
language:en
Short-container-title:Materials Research Bulletin

Author:

Eger D.,Zemel A.,Shtrikman Hadas,Tamari N.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference15 articles.

1. Liquid phase epitaxial growth of laser heterostructures in Pb1−xSnxTe

2. Threshold reduction in Pb1−xSnxTe laser diodes through the use of double heterojunction geometries

3. Double heterostructure Pb1‐xSnxTe–PbTe lasers with cw operation at 77 K

4. Continuous operation over 1500 h of a PbTe/PbSnTe double‐heterostructure laser at 77 K

5. M. Oron and A. Zussman, Appl. Phys. Lett., in press.

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Acceptor action of thallium and antimony in Pb0.8Sn0.2Te thin films;Journal of Materials Science Letters;1989-11

2. Effect of bismuth on the electrical properties of Pb0.8Sn0.2Te thin films;Zeitschrift f�r Physik B Condensed Matter;1988-12

3. Effect of indium on the electrical transport properties of Pb0.8Sn0.2Te thin films;Materials Research Bulletin;1988-01

4. Effect of antimony on the electrical properties of Pb0.8Sn0.2Te thin films;Infrared Physics;1988-01

5. Metal-Semiconductor Transitions in Doped IV-VI Semiconductors;Localization and Metal-Insulator Transitions;1985

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