Switching and memory effect in TlInSe2
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference7 articles.
1. About a Group of Three-Component Compounds being Analogous to Binary Semiconductors of the AIII BVI Type
2. On Some Properties of TlInS2 (Se2, Te2) Single Crystals
3. On new analogs of TlSe-type semiconductor compounds
4. Constitutional diagram and physical properties of TlSeInSe pseudobinary system
5. The piezoresistive effect in the p-TlInSe2 single crystals
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1. Anisotropic properties and conduction mechanism of TlInSe2 chain semiconductor;Applied Physics A;2012-12-06
2. Synthesis, characterization, and anomalous dielectric and conductivity performance of one-dimensional (bdaH)InSe2 (bda=1,4-butanediamine);Materials Research Bulletin;2011-11
3. Electronic properties and phase transitions in low-dimensional semiconductors;Journal of Physics: Condensed Matter;2008-07-01
4. Nuclear exchange coupling and electronic structure of low-dimensional semiconductors;Applied Magnetic Resonance;2004-03
5. Negative-differential-resistance effects in amorphous CuInS2 thin film;Journal of Materials Science: Materials in Electronics;1999
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