Growth and characterization of pentenary Cu0.5Ag0.5InSSe crystals grown by chemical vapor transport technique-Reference-Cited by-同舟云学术

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Growth and characterization of pentenary Cu0.5Ag0.5InSSe crystals grown by chemical vapor transport technique

Published:1995-11 Issue:11 Volume:30 Page:1371-1377
ISSN:0025-5408
Container-title:Materials Research Bulletin
language:en
Short-container-title:Materials Research Bulletin

Author:

Tafreshi M.J.,Balakrishnan K.,Dhanasekaran R.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference14 articles.

1. Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties and Applications;Shay,1975

2. Growth of Cu(AlxGa1−x)SSe pentenary alloy crystals by iodine chemical vapor transport method

3. Crystallographic properties of some ternary and multinary Te-based semiconductors

4. Phase studies, crystal growth, and optical properties of CdGe(As1−xPx)2and AgGa(Se1−xSx)2solid solutions

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth of Semiconductor Single Crystals from Vapor Phase;Springer Handbook of Crystal Growth;2010

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