Growth of GaAs, GaxIn1−xSb and GaxAl1−xAs by the travelling heater method-Reference-Cited by-同舟云学术

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Growth of GaAs, GaxIn1−xSb and GaxAl1−xAs by the travelling heater method

Published:1976-08 Issue:8 Volume:11 Page:895-901
ISSN:0025-5408
Container-title:Materials Research Bulletin
language:en
Short-container-title:Materials Research Bulletin

Author:

Yip Vincent F.S.,Wilcox William R.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference16 articles.

1. Gallium Arsenide;Hemmat,1970

2. Heat and mass transfer in the travelling heater method of crystal growth

3. V.F.S. Yip and W.R. Wilcox, J. Crystal Growth (in press)

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interface stability problem towards the end of THM growth of cadmium zinc telluride crystals;Journal of Crystal Growth;2022-04

2. Crystal Growth by Traveling Heater Method;Handbook of Crystal Growth;2015

3. InSb Czochralski Growth Single Crystals for InGaSb Substrates;MRS Proceedings;2014

4. Crystal growth of bulk ternary semiconductors: Comparison of GaInSb growth by horizontal Bridgman and horizontal traveling heater method;Journal of Crystal Growth;2010-04

5. On segregation during crystal growth from a solution zone;Crystal Research and Technology;1988-04

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