Spin-dependent Seebeck effect and huge growth of thermoelectric parameters at band edges in H- and F-doped graphene, free-standing and deposited on 4 H -SiC(0001) C-face-Reference-Cited by-同舟云学术

Spin-dependent Seebeck effect and huge growth of thermoelectric parameters at band edges in H- and F-doped graphene, free-standing and deposited on 4 H -SiC(0001) C-face

Published:2014-12 Issue: Volume:80 Page:255-267
ISSN:0008-6223
Container-title:Carbon
language:en
Short-container-title:Carbon

Author:

Wierzbowska Małgorzata,Dominiak Adam

Funder

European Funds for Regional Development

Operational Program Innovative Economy

National Science Center in Poland

Publisher

Elsevier BV

Subject

General Chemistry,General Materials Science

Reference44 articles.

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