Sharp switching behaviour in graphene nanoribbon p-n junction-Reference-Cited by-同舟云学术

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Sharp switching behaviour in graphene nanoribbon p-n junction

Published:2017-09 Issue: Volume:121 Page:399-407
ISSN:0008-6223
Container-title:Carbon
language:en
Short-container-title:Carbon

Author:

Hammam Ahmed M.M.,Schmidt Marek E.,Muruganathan Manoharan,Mizuta Hiroshi

Funder

Center of Innovation (COI) program

Egyptian Ministry of Higher Education

Publisher

Elsevier BV

Subject

General Chemistry,General Materials Science

Reference44 articles.

1. Keeping hot chips cool;Puri,2005

2. Tunnel field-effect transistors as energy-efficient electronic switches;Ionescu;Nature,2011

3. Tunnel field-effect transistors: state-of-the-art;Lu;IEEE J. Electron Devices Soc.,2014

4. Energy band-gap engineering of graphene nanoribbons;Han;Phys. Rev. Lett.,2007

5. Coulomb blockade in graphene nanoribbons;Sols;Phys. Rev. Lett.,2007

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1. Gate-tunable optical extinction of graphene nanoribbon nanoclusters;APL Materials;2021-07-01

2. Synthesis of Wafer‐Scale Graphene with Chemical Vapor Deposition for Electronic Device Applications;Advanced Materials Technologies;2021-04-23

3. Double quantum dot-like transport in controllably doped graphene nanoribbon;Applied Physics Letters;2021-02-22

4. Graphene-based metal matrix nanocomposites: Recent development and challenges;Journal of Composite Materials;2021-01-21

5. Usage of Graphene in Power Systems. A Survey;2020 XI International Conference on Electrical Power Drive Systems (ICEPDS);2020-10-04

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