Doping modulation of quasi-free-standing monolayer graphene formed on SiC(0001) through Sn1-Ge intercalation
Author:
Funder
National Research Foundation of Korea
Ministry of Education
Publisher
Elsevier BV
Subject
General Chemistry,General Materials Science
Reference26 articles.
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3. Ambipolar doping in quasifree epitaxial graphene on SiC(0001) controlled by Ge intercalation;Emtsev;Phys. Rev. B Condens. Matter Phys.,2011
4. Charge neutrality and band-gap tuning of epitaxial graphene on SiC by molecular doping;Coletti;Phys. Rev. B Condens. Matter Phys.,2010
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