A novel nonvolatile memory device based on oxidized Ti3C2Tx MXene for neurocomputing application
Author:
Funder
National Natural Science Foundation of China
Publisher
Elsevier BV
Subject
General Chemistry,General Materials Science
Reference43 articles.
1. In-memory computing with resistive switching devices;Ielmini;Nature Electronics,2018
2. Artificial neurons based on Ag/V2C/W threshold switching memristors;Wang;Nanomaterials,2021
3. Fully memristive neural networks for pattern classification with unsupervised learning;Wang;Nature Electronics,2018
4. Logic-in-memory based on an atomically thin semiconductor;Migliato Marega;Nature,2020
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