Electro-optical properties of monolayer and bilayer boron-doped C3N: Tunable electronic structure via strain engineering and electric field
Author:
Funder
National Research Foundation of Korea
NRF
MSIT
Publisher
Elsevier BV
Subject
General Chemistry,General Materials Science
Reference89 articles.
1. Electric field effect in atomically thin carbon films;Novoselov;Science,2004
2. Structures of exfoliated single layers of WS2, MoS2, and MoSe2 in aqueous suspension;Gordon;Phys. Rev. B,2002
3. Two-dimensional nanosheets produced by liquid exfoliation of layered materials;Coleman;Science,2011
4. Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p–n junctions;Ross;Nat. Nanotechnol.,2014
5. Anomalous Raman spectra and thickness-dependent electronic properties of WSe2;Sahin;Phys. Rev. B,2013
Cited by 71 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Intriguing topological signatures in newly predicted family of Dumbbell C3NX (X = C, Si, Ge) and its quasi-1D derivatives;Applied Materials Today;2024-10
2. Strain modulated optical properties of MoSi2P4 monolayer – insights from DFT;Physica Scripta;2024-05-07
3. S-C3N6 monolayer by atomic doping serving as solar cells and photocatalyst;Colloids and Surfaces A: Physicochemical and Engineering Aspects;2024-05
4. C3N based heterobilayers: a potential platform to explore optoelectronic and thermoelectric properties;Journal of Physics: Condensed Matter;2024-04-18
5. Comparative first principles investigation on the structural, optoelectronic and vibrational properties of strain-engineered graphene-like AlC3, BC3 and C3N monolayers;Journal of Physics: Condensed Matter;2024-04-02
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3