The production of SiC nanowalls sheathed with a few layers of strained graphene and their use in heterogeneous catalysis and sensing applications-Reference-Cited by-同舟云学术

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The production of SiC nanowalls sheathed with a few layers of strained graphene and their use in heterogeneous catalysis and sensing applications

Published:2011-11 Issue:14 Volume:49 Page:4911-4919
ISSN:0008-6223
Container-title:Carbon
language:en
Short-container-title:Carbon

Author:

Hu Ming-Shien,Kuo Chun-Chiang,Wu Chien-Ting,Chen Chun-Wei,Ang Priscilla Kailian,Loh Kian Ping,Chen Kuei-Hsien,Chen Li-Chyong

Publisher

Elsevier BV

Subject

General Chemistry,General Materials Science

Reference39 articles.

1. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: a review;Casady;Solid State Electron,1996

2. Tailored macroporous SiCN and SiC structures for high-temperature fuel reforming;Sung;Adv Funct Mater,2005

3. Growth process of close-packed aligned carbon nanotubes on SiC;Kusunoki;Appl Phys Lett,2005

4. Electronic confinement and coherence in patterned epitaxial graphene;Berger;Science,2006

5. The rise of graphene;Geim;Nat Mater,2007

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