Direct synthesis of high-quality nitrogen-doped graphene via ion implantation-Reference-Cited by-同舟云学术

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Direct synthesis of high-quality nitrogen-doped graphene via ion implantation

Published:2018-11 Issue: Volume:139 Page:732-739
ISSN:0008-6223
Container-title:Carbon
language:en
Short-container-title:Carbon

Author:

Zhao Yunbiao,Wang Xu,Fu Engang,Han Dong,Wang Peipei,Wu Zaoming,Chen Yi,Chen Yuhan,Zhao Ziqiang^ORCID

Funder

National Magnetic Confinement Fusion Energy Research

Ministry of Science and Technology of China

National Science Foundation of China

Ion Beam Materials Laboratory at Peking University

Instrumental Analysis Fund of Peking University

Publisher

Elsevier BV

Subject

General Chemistry,General Materials Science

Reference55 articles.

1. The rise of graphene;Geim;Nat. Mater.,2007

2. Electric field effect in atomically thin carbon films;Novoselov;Science,2004

3. Flexible molecular-scale electronic devices;Park;Nat. Nanotechnol.,2012

4. Energy gaps and a zero-field quantum Hall effect in graphene by strain engineering;Guinea;Nat. Phys.,2010

5. Graphene strained by defects;Robinson;ACS Nano,2017

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