Valence photoemission intensity oscillations of C84-Reference-Cited by-同舟云学术

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Valence photoemission intensity oscillations of C84

Published:2012-04 Issue:5 Volume:50 Page:1762-1768
ISSN:0008-6223
Container-title:Carbon
language:en
Short-container-title:Carbon

Author:

Wang Peng,Ni Jing-fu,Meng Liang,Wang Xiao-Bo,Sheng Chun-Qi,Zhang Wen-Hua,Xu Yang,Xu Fa-Qiang,Zhu Jun-Fa,Li Hong-Nian

Funder

National Natural Science Foundation of China

National Synchrotron Radiation Laboratory of China

Publisher

Elsevier BV

Subject

General Chemistry,General Materials Science

Reference41 articles.

1. Electronic states of solid C60: symmetries and photoionization cross sections;Benning;Phys Rev B,1991

2. Angle-resolved photoelectron spectroscopy of C60;Liebsch;Phys Rev A,1995

3. Partial photoionization cross sections of C60 and C70: a gas versus adsorbed phase comparison;Korica;Surf Sci,2010

4. Photoemission intensity oscillations in the valence bands of C70 film;Li;J Electron Spectrosc Relat Phenom,2011

5. Evidence for oscillations in the C70 valence photoionization cross sections;Liebsch;Chem Phys Lett,1997

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electronic structures of 1-ML C84/Ag(111): Energy level alignment and work function variation;Surface Science;2017-12

2. Pits and adatoms at the interface of 1-ML C 84 /Ag (111);Chinese Physics B;2013-12

3. Electronic States of IC 60 BA and PC 71 BM;Chinese Physics Letters;2013-11

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