Behavior of localized states in double twisted ABC trilayer graphene
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ANID
Government of Spain Ministry of Universities
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Elsevier BV
Reference59 articles.
1. Graphene bilayer with a twist: Electronic structure;Lopes dos Santos;Phys. Rev. Lett.,2007
2. Flat bands in slightly twisted bilayer graphene: Tight-binding calculations;Suárez Morell;Phys. Rev. B,2010
3. Localization of dirac electrons in rotated graphene bilayers;Trambly de Laissardière;Nano Lett.,2010
4. Observation of Van Hove singularities in twisted graphene layers;Li;Nat. Phys.,2009
5. Moiré bands in twisted double-layer graphene;Bistritzer;Proc. Natl. Acad. Sci.,2011
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1. Evolution of superconductivity in twisted graphene multilayers;Proceedings of the National Academy of Sciences;2024-07-30
2. Metal–Semiconductor Behavior along the Line of Stacking Order Change in Gated Multilayer Graphene;Materials;2024-04-21
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