Investigation of epitaxial graphene via Raman spectroscopy: Origins of phonon mode asymmetries and line width deviations

Author:

Hähnlein B.ORCID,Lebedev S.P.ORCID,Eliseyev I.A.ORCID,Smirnov A.N.ORCID,Davydov V.Y.ORCID,Zubov A.V.ORCID,Lebedev A.A.ORCID,Pezoldt J.

Funder

DFG

DAAD

Publisher

Elsevier BV

Subject

General Chemistry,General Materials Science

Reference78 articles.

1. High-pressure Raman spectroscopy of graphene;Proctor;Phys. Rev. B,2009

2. Uniaxial strain in graphene by Raman spectroscopy: G peak splitting, grüneisen parameters, and sample orientation;Mohiuddin;Phys. Rev. B,2009

3. Probing the nature of defects in graphene by Raman spectroscopy;Eckmann;Nano Lett.,2012

4. Raman characterization of defects and dopants in graphene;Beams;J. Condens. Matter Phys.,2015

5. Defect characterization in graphene and carbon nanotubes using Raman spectroscopy;Dresselhaus;Phil. Trans. R. Soc. A,2010

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