1. Theoretical study of THz current oscillations in GaAs1-x Nx;Feng;Journal of Applied Physics,2008
2. D-band Si-IMPATT diodes with 300 mW CW output power at 140 GHz;Wollitzer;Electronics Letters,1996
3. Flat doping profile double-drift silicon IMPATT for reliable CW high power high-efficiency generation in the 94-GHz window;Dalle;IEEE Transactions on Electron Devices,1990
4. Prospects of 4H-SiC double drift region IMPATT device as a photo-sensitive high-power source at 0.7 terahertz frequency regime;Mukherjee;Active and Passive Electronic Components,2009
5. DC and high-frequency characteristics of GaN-based IMPATTs;Panda;IEEE Transactions on Electron Devices,2001