Silicon Power Field Controlled Devices and Integrated Circuits
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Publisher
Elsevier
Reference205 articles.
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1. THE EFFECTS OF SPACE RADIATION EXPOSURE ON POWER MOSFETS: A REVIEW;International Journal of High Speed Electronics and Systems;2004-06
2. Analytical base transit time of integrated bipolar transistors in quasi-saturation and hard saturation;IEE Proceedings - Circuits, Devices and Systems;2000
3. Modelling of lightly doped collector of a bipolar transistor operating in quasi-saturation region;International Journal of Electronics;1999-01
4. Planar Junction Structures Employing Junction Extension Termination for Near-Ideal Breakdown Characteristics: A Comparative Review;IETE Technical Review;1991-03
5. High-voltage device termination techniques a comparative review;IEE Proceedings I Solid State and Electron Devices;1982
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