Dislocation annealing in interfaces between crystals and glasses-Reference-Cited by-同舟云学术

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Dislocation annealing in interfaces between crystals and glasses

Published:1986-02 Issue:2 Volume:20 Page:275-278
ISSN:0036-9748
Container-title:Scripta Metallurgica
language:en
Short-container-title:Scripta Metallurgica

Author:

Dollar M.,Gleiter H.

Publisher

Elsevier BV

Subject

General Engineering

Reference11 articles.

1. On the absorption of dislocations by grain boundaries

2. The annealing of dislocations in high-angle grain boundaries

3. Electron microscopic observations on the structure of dislocations in interphase boundaries

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. SiGe relaxation on silicon-on-insulator substrates: An experimental and modeling study;Journal of Applied Physics;2003

2. Mechanism for the Reduction of Threading Dislocation Densities in Si0.82Ge0.18 Films on Silicon on Insulator Substrates;MRS Proceedings;2001

3. In-situ studies of the crystallization of amorphous CoSi2 films;Ultramicroscopy;1989-06

4. Corrosion and Auger Studies of a Nickel‐Base Metal‐Metalloid Glass: I . The Effect of Elemental Interactions on Passivity in the General Corrosion of Metglass 2826A;Journal of The Electrochemical Society;1988-09-01

5. A Comparison of Interfacial Attack in Devitrified Metglass 2826A and AISI 304 Stainless Steel by EPR Testing;CORROSION;1987-09

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