Structural and photoelectrical properties of Nb-doped PZT thin films deposited by pulsed laser ablation-Reference-Cited by-同舟云学术

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Structural and photoelectrical properties of Nb-doped PZT thin films deposited by pulsed laser ablation

Published:2004-01 Issue:6 Volume:24 Page:1633-1636
ISSN:0955-2219
Container-title:Journal of the European Ceramic Society
language:en
Short-container-title:Journal of the European Ceramic Society

Author:

Boerasu I.,Pereira M.,Gomes M.J.M.,Watts B.,Leccabue F.,Vilarinho P.M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Ceramics and Composites

Reference14 articles.

1. Limitations on ULSI-FeRAMs;Scott;IEICE Transactions on Electronics,1998

2. Landau theory-based validation of the fatigue mechanism in Sol-Gel and MOCVD PZT films using the correlated analysis of the hysteresis loop parameters;Ricinschi;Ferroelectrics,2002

3. Dipolar defect model for fatigue in ferroelectric perovskites;Poykko;Phys. Rev. Lett.,1999

4. Ferroelectric Memories;Scott,2000

5. Electrode field penetration;Dawber;Ferroelectrics,2002

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of Nb-doped PZT (65/35/1) ferroelectric thin films deposited by pulsed laser ablation;Vacuum;2008-08

2. Structural evolution of PZTN thin films produced by pulsed laser ablation deposition;Vacuum;2008-08

3. Effect of TiO₂ Nanopowders on the Sintering and Electric Properties of Lead Zirconate Titanate Ceramics;Key Engineering Materials;2007-04

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